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SOT-323 SS8050W NPN Silicon Epitaxial Planar Transistor for High Collector Current

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Guangdong Uchi Electronics Co.,Ltd

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Name: SOT323 SS8050W NPN Silicon Epitaxial Planar Transistor for High Collector Current
Brand: UCHI
Price: 1 USD

Brand Name : UCHI

Model Number : SS8050W

Certification : Completed

Place of Origin : Dongguan China

MOQ : 1000PCS

Price : Negotiable

Payment Terms : T/T, Western Union

Supply Ability : 5000pcs

Delivery Time : 3weeks

Packaging Details : Standard

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SOT-323 high frequency low noise transistor(PNP)

FEATURES

- Collector Current.(IC= 1.5A)

- Complementary To SS8550W.

- Collector dissipation:PC=200mW(TC=25℃)

APPLICATIONS

- High Collector Current.

ORDERING INFORMATION

Type No.:SS8050W

Marking: Y1

Package Code:SOT-323

ELECTRICAL CHARACTERISTICS @ Ta=25 ℃ unless otherwise specified

Parameter	Symbol	Test conditions	MIN	TYP	MAX	UNIT
Collector-base breakdown voltage	V(BR)CBO	IC=100μA,IE=0	40			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=2mA,IB=0	25			V
Emitter-base breakdown voltage	V(BR)EBO	IE=-100μA,IC=0	5			V
Collector cut-off current	ICBO	VCB=40V,IE=0			0.1	μA
Collector cut-off current	ICEO	VCE=20V,IB=0			0.1	μA
Emitter cut-off current	IEBO	VEB=5V,IC=0			0.1	μA
DC current gain	hFE	VCE=1V,IC=100mA	120		400
DC current gain	hFE	VCE=1V,IC=800mA	40
Collector-emitter saturation voltage	VCE(sat)	IC=800 mA, IB= 80mA			0.5	V
Base-emitter saturation voltage	VBE(sat)	IC=800 mA, IB= 80mA			1.2	V
Base-emitter voltage	VBE	VCE=1V IC=10mA			1	V
Transition frequency	fT	VCE=10V, IC= 50mA f=30MHz	100			MHz

CLASSIFICATION OF hFE(1)

Rank	L	H	J
Range	120-200	200-350	300-400

TYPICAL CHARACTERISTICS @ Ta=25 ℃ unless otherwise specified

Product Tags:

SS8050W

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